Abstract
-Ferroelectric domain engineering is important for studying the dipolar structure of these materials. This dipolar structure is formed because of defects and imperfections produced using various doping. The KNbO3 ferroelectric single crystal was prepared using flux methods. Al2O3 aluminum trioxide (Al) was used as a dopant in a KNbO3 crystal. The domain structure of the crystal was studied by applying electric fields of 50 V/cm, 60 V/cm, 70 V/cm, 80V/cm, and 100 V/cm in an Al-doped KNbO3 single crystal. Furthermore, the critical field on which domains were nucleated after applying the electric field, was also studied. This work confirmed that the critical field of nucleation of the new domain in an Al-doped KNbO3 single crystal was 70 V/cm, which is slightly less than that of pure KNbO3 single crystal.
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