Abstract
A CPD image sensor with an SOI (silicon-on-insulator) structure has been developed. The sensor is composed of read-out transistors fabricated on laser-recrystallized silicon, photodiodes on the seeding region, an MOS shift register, and a CCD shift register. A reproduced image with a 50 (H)*60 (V) pixel image sensor showed reduction of smear noise to a value 1/8000 times that in the bulk transistor as a result of complete isolation of the drains of the read-out transistors by oxide layers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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