A cost‐effective fluorination method for enhancing the performance of metal oxide thin‐film transistors

Abstract

AbstractFluorination is a common technique for enhancing the performance of metal oxide (MO) thin‐film transistors (TFTs). However, it usually requires extra processing steps under harsh conditions and brings about a high thermal budget. This work reports a mild fluorination method for MO TFTs using a fluorinated polyimide (F‐PI) in an industry‐standard planarization (PLN) process. During the thermal curing of the F‐PI, fluorine‐containing fragments diffused into MO channels and significantly improved the electrical performance of MO‐TFTs. Channel fluorination was observed in both bottom‐ and top‐gated devices, exemplifying the effectiveness of this method. A 2.2‐in., monochrome AMOLED prototype display was fabricated using the fluorinated MO TFTs. This method provides a mild and low‐thermal‐budget fluorination technique and is useful for the cost‐effective production of active‐matrix flat‐panel display panels.