A correlation between crystalline qualities and growth parameters in GaAs on Si grown by molecular-beam epitaxy

Abstract

The effects of the As4/Ga flux ratio and the growth temperature on the crystalline qualities are demonstrated in the heteroepitaxy of GaAs on Si grown by molecular-beam epitaxy. To improve surface morphology, either the As4/Ga flux ratio must be optimized to 8 when grown at 560 °C or the growth temperature must be increased. In electron-beam-induced current images, a lot of complicated dark regions have been observed. The dark regions decreased and photoluminescence intensity became strong with the increase in the growth temperature.