Abstract
Silicon particle detectors in tracking devices for the high luminosity Large Hadron Collider will suffer from an extremely intense radiation field of mainly hadronic particles. The main radiation induced deep defect centres in silicon, responsible for the increase of the dark current and corresponding noise, are the cluster related defect levels E5 and E205a. This work confirms the identification of the E5 level as tri-vacancy (V3). This defect transforms into the tri-vacancy-oxygen complex (V3O) at temperatures above 200°C. The defect concentrations were obtained by means of Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current technique (TSC) performed on float zone (FZ), epitaxially grown (Epi) and Magnetic Czochralski (MCz) silicon diodes, irradiated with 1MeV neutrons and 23GeV protons.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
