A contribution to the current gain temperature dependence of bipolar transistors

Abstract

In this paper it is demonstrated by a simple calculation that the temperature dependence of current gain may be significantly influenced by both the different freeze-out rates of mobile carriers in emitter and base and the different temperature dependences of mobilities in these two regions. These effects can considerably reduce the decrease of current gain towards low temperatures, caused by the effective bandgap difference between the emitter and base region.