Abstract
The high-frequency characteristics of semiconductor lasers are described using an equivalent circuit model. The paper investigates the small-signal intensity modulation (IM) and frequency modulation (FM) when the parabolic gain approximation is used and when lateral diffusion of carriers in the active region of the laser is taken into account via a one-dimensional diffusion equation. We have performed the small-signal analysis to give a more transparent description of the influence of parabolic gain approximation on the modulation response. The inclusion of parabolic gain approximation and the gain compression characteristics of the active region in the expression derived for IM, FM and the chirp-to-modulated power ratio allows the present model to reflect the influence of the laser structure on the modulation performances.
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