A continuous and general model for boron diffusion during post-implant annealing including damaged and amorphizing conditions

B Baccus,E Vandenbossche

doi:10.1109/iedm.1994.383275

A continuous and general model for boron diffusion during post-implant annealing including damaged and amorphizing conditions

B Baccus, E Vandenbossche

https://doi.org/10.1109/iedm.1994.383275

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Publication Date: Dec 11, 1994

Citations: 1

Affiliation: Institut Supérieur de l'Électronique et du Numérique, Institute of Electronics, Microelectronics and Nanotechnology

#Initial Level Of Activation #Wide Range Of Doses + Show 8 more

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Abstract

A model has been developed for boron diffusion after ion implantation and validated for a very wide range of doses and temperatures. For the first time, it allows the continuous simulation of the transition between amorphizing and non-amorphizing conditions. Transient-enhanced diffusion (TED) and activation are modeled by taking into account the implant damage and precipitation kinetics. It is shown that the initial level of activation is one of the most important parameters in such an analysis. >

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