Abstract
A characterization technique is described which is capable of measuring the salient electronic properties of the layered structure formed during the internal gettering process in Czochralski grown silicon. The method is contactless and involves the use of a two laser, pump-probe, system to measure the carrier lifetimes in the defect-free-zone (DFZ) and the bulk as well as to measure the width of the DFZ. Excellent agreement is found with the results of theory and those of the standard bevel and etch method.
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