A Contactless Sensing Analysis of a CUP Wafer

Abstract

The detected structures in a CUP wafer by sensing (leakage) analysis are presented in this paper. The pad structures are designed by the ADS2009 & TSMC 0.18um CMOS processes design rules, and use some electrostatic discharge (ESD) protection devices and circuits under these pads. Furthermore, the signal will be passed through these ESD devices or circuits on the top-metal pad as a sinusoidal, square, or ESD pulse waveform being injected. It is found that during an ESD occurred situation, a strong signal coupling can be sensed by the ESD protection circuits.