Abstract
This device design approach combines sputter-deposited TiO2 antireflection layer (ARL) and plasma-enhanced chemical vapor deposition-grown SiOx intermediate-reflector layer (IRL) in superstrate a-Si∕μc-Si thin film solar cell. The loss of current from either the component cells with individual application of ARL and IRL has been recovered with their combined application. With both ARL and IRL in a-Si∕μc-Si cell, (a) the top cell current and (b) the sum of top and bottom cell current increases. An initial efficiency of 11.8% [Voc=1.42V, FF=0.74, Jsc (top)=11.5mAcm−2, Jsc (bottom)=11.2mAcm−2] is achieved from such an a-Si∕μc-Si cell with a total Si layer thickness less than 2μm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
