Abstract
Due to their simple structures and high-density integration, Memristors are employed to construct hardware spiking neurons. In this letter, we present a TiN/NbOx/Pt memristor with a tunable threshold for constructing configurable neurons. By applying positive tuning voltages with different compliance currents, the device exhibits multilevel negative threshold voltages. Additionally, by changing the amplitudes/widths of positive tuning pulses, we obtain a quasi-linear modulation of negative threshold voltages. Based on such a device, we construct a leaky integrate-and-fire neuron with configurable curves between the response speed and the excitatory input. These results indicate that our device is suitable to construct a configurable neuron, which is expected to maintain homeostasis and improve the stability of computing systems.
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