Abstract
To obtain more quantitative electrical information of polymeric field-effect transistors, PFETs, this paper discuss a very important topic of the polymeric FETs modeling, and proposes a drain current-drain voltage, ISD-VSD, modeling approach only with two parameters for the PFETs. To validate the availability of the concise model proposed in the paper, experimental ISD-VSD curves data of four different PFETs are tested, simulation results show that the proposed models are accurate, effective and simple models for PFETs. And then an analytical description of relationship ISD and gate voltage, VG, is obtained. Furthermore, new path to calculate threshold voltage, Vth, by means of mathematical method is constructed. Hence, indeed new and more quantitative electrical information of PFETs is obtained.
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