Abstract
An accurate non-linear large-signal physics-based model for 50 V GaN HEMT technology is presented in this paper. The developed model accounts for the effects of trapping on I-V and C-V characteristics of GaN HEMTs self-consistently. Using the developed model we show the significance of self-consistent modeling of I-V and C-V behavior of the device on its large signal performance in presence of trapping. The computational speed of the developed physics-based model is also presented showing its aptness for use in circuit simulations.
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