A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results

Abstract

A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM but at the same time, from a computational point of view, suitable for simulating large circuits. In Part II, a parameter determination procedure is described and demonstrated for a variety of SiGe process technologies.