A computational study of the influence of oxygen incorporation on crystal growth and contamination in BaLiF 3

Abstract

The incorporation of oxygen into the fluoroperovskite material BaLiF 3 is considered. Two scenarios are studied. Firstly, oxygen incorporation is considered from the viewpoint of growing the crystal from its component fluorides BaF 2 and LiF in the presence of different gases (oxygen, water and carbon dioxide). Secondly, contamination of grown crystals is considered using the same gases. The energy of an oxygen substitutional defect is calculated, and a range of possible solution energies using different charge compensation mechanisms calculated. It is shown in the first case that incorporation of oxygen via water vapour with charge compensation by fluorine vacancies provides the lowest energy route. In the second case similar conclusions are reached, but the energies are lower, indicating that grown samples are more susceptible to contamination by water.