A computational study of rectification behavior of doped α-graphyne nanotubes

Abstract

α-graphyne is a carbon nanosheet with sp and sp2 hybridization. This sheet is a hexagonal semi-metal like graphene. In this paper, we roll α-graphyne sheet and build zigzag nanotubes with three different size (n = 5, 6, 7). We used density functional tight binding (DFTB) to compute the band structures of nanotubes. The results show that the gap energies for n = 5, 6, 7 are about 0.648, 0.115, 0.309 eV, respectively. We add impurity atoms such as boron (B) and nitrogen (N) to nanotube. We found that the band gap energy of these doped nanotubes decrease. In addition, the structures that carbon atoms with sp2 hybridization replaced by impurity atoms are more stable. For the first time, we build two doped nanotube diodes at low (M1 model) and high (M2 model) concentration and compute current-voltage (I–V) curves with non-equilibrium Green's functions (NEGF). The I–V curves of doped nanotubes show non-linear asymmetric behavior. Form I–V curves, we compute rectification ratio and negative differential resistance (NDR). The low doped zigzag nanotube with n = 5 (M1 model) shows the highest rectification ratio (about 12.236 × 104) at 0.3 V. In addition, the rectification ratio of this diode at high concentration (M2) is about 3.67 × 103 at 0.6 V. The I–V curve of M2 model illustrations a notably negative differential resistance (NDR) at reverse bias. The ratio of current at peak to current at valley is about 26.83. To describe the I–V curves, we used transmission spectrum, the band structures of electrodes and the density of states (DOS) of central scattering region. In general, transition occurs when the energy levels of three regions (left electrode, scattering and right electrode) overlap.