A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Abstract

Since the last few decades, light-absorbing materials based on CuInGaSe2 (CIGS), CuInS2 (CIS), and CdTe have dominated the research in thin-film solar cells. To fabricate large-scale solar cells from these materials, problems may arise due to limited availability of the constituents, viz. Se, In, Cd, and Te, and the toxicity of some of these elements. Hence, recent research efforts are attentive toward abundantly available non-toxic, larger value of absorption coefficient and non-conventional elements. The Cu3BiS3 having wittichenite orthorhombic structure is one the most promising absorber layer candidates for low-cost thin-film solar cells. It has suitable direct band gap (1.10–1.86 eV), large absorption coefficient (105 cm−1) with composition of earth abundant, and relatively non-toxic and cost-effective constituents. Till now, a majority work was done on the preparation of Cu3BiS3 thin films by various techniques. Therefore, a comprehensive review of recent literature of Cu3BiS3 is urgently required. This paper will review the various techniques that have been used to deposit Cu3BiS3 semiconductor with the hope of new paths for the beginner.