Abstract

A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets.

Highlights

  • Hall Effects—Brief History and EvolutionThe Hall Effect is a well-known and established phenomenon since it was discovered by Edwin

  • If the macroscale devices are used in a large diversity of domains, such as robotics [103], biomedical [92], medicine [102], astronomy [106], automotive [31], military, farming [89], office [31], etc., it appears that microscale devices are more oriented to be integrated into the microelectronics circuitry and industry

  • An extended up-to-date review of the Hall Effect-based devices, circuitry, and Process Development Kits (PDK) was presented with sub-classifications to macro, micro, nano, and quantum-based scales

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Summary

Hall Effects—Brief History and Evolution

The Hall Effect is a well-known and established phenomenon since it was discovered by Edwin. A review proceeding was published to summarize the existing applications and components of the time [4] While this was the status for the macro scale in the eighties, good progress occurred in the decades, when additional related Hall Effects were discovered, enabling new Sensors 2020, 20, 4163; doi:10.3390/s20154163 www.mdpi.com/journal/sensors. One can understand how useful the Hall Effect can be whenever applied into specific applications In these text books, there are extensive lists of specialized into. 2020, 20, 4163 previous publications, one can understand how useful the Hall Effect can 3 of be whenever applied into specific applications In these text books, there are extensive lists of specialized devices. Let us look at twoin examples: In the[34], sixties, Bulman presented a set of classic applications applications and devices, a large study andW.

Hall Effect-Based Devices—Why?
Hall Effects Family Principles—Brief Qualitative Review
Section 3.1 presents isotropic present
DC Hall Magneto-Resistance
Dynamic Magneto-Conductivity Tensor for Free Carrier
Free Electron Model and Dielectric Tensor
Review of Macroscale
Review of Macroscale Hall Effect-Based Devices
CMOS Hall Sensors in Silicon
Bipolar PNP Junctions in Graphene
Review of Nanoscale Hall Effect-Based Devices
Hall Quantum-Based Structures
Choice of the Material
Classic limitations
Quantum Limitations and Ballistic Models
Fabrication and Smooth Integration
Findings
Conclusions
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