Abstract

This paper presents a volumetric comparison among three possible optimized three phase EMI filter structures, a three phase PFC converter used in cutting edge applications, such as avionics, space or shipboard power systems. The size minimization of each of the filter structures, described in the paper, was performed utilizing the volumetric optimization methodology proposed in the paper. This paper theoretically demonstrates the design steps for choosing the appropriate filter component values and number of filter stages to achieve the smallest volume of the DM filter stage for any given EMI filter structure. While the validation of the proposed design methodology was done through a MATLAB simulation, an experimental verification was also performed by designing and comparing the optimized EMI filter structures for a 2.3 kW proof-of-concept of a three-phase boost PFC converter for more electric aircraft (MEA) applications to comply with the stringent EMI requirements of the DO-160F standard.

Highlights

  • Optimization and Comparison.The recent research trend in the emerging fields of high-density power electronics, such as avionics, space or marine applications, has imposed new design challenges to make the modern AC-DC rectifier systems, like active boost Power Factor Correction (PFC) converters, comply with the stringent requirements in terms of efficiency, reliability, volume, weight, line harmonics and, EMI [1,2,3,4,5]

  • In order to restrict the frequency-related losses in the switching semiconductor devices, the employment of wide-bandgap semiconductor devices, such as Silicon-carbide (SiC) and Gallium Nitride (GaN) MOSFETs, become an obvious choice due to their faster switching transients and lower device parasitics

  • We have proposed precise volumetric cost function models of the differential mode (DM) filter passive elements, in which the volumes of passive components are quantified as linear combinations of current/voltage, element value and their stored energy

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Summary

Introduction

Optimization and Comparison.The recent research trend in the emerging fields of high-density power electronics, such as avionics, space or marine applications, has imposed new design challenges to make the modern AC-DC rectifier systems, like active boost Power Factor Correction (PFC) converters, comply with the stringent requirements in terms of efficiency, reliability, volume, weight, line harmonics and, EMI [1,2,3,4,5]. As the industry demands more power dense converters with lighter weight and volume, the switching frequency of the converter must be increased in order to lower the passive component volume. In order to restrict the frequency-related losses in the switching semiconductor devices, the employment of wide-bandgap semiconductor devices, such as Silicon-carbide (SiC) and Gallium Nitride (GaN) MOSFETs, become an obvious choice due to their faster switching transients and lower device parasitics. The presence of power stage non-idealities in any power converter, such as stray inductances, parasitic capacitances of switching devices and inter/intra winding capacitances of the inductor/transformer, give rise to voltage- and current-mode EMI noise sources that tend to propagate towards the AC grid and/or chassis (or potential earth), resulting in increased leakage current and grid pollution.

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