Abstract
This paper provides the results of a comprehensive comparison between complementary metal oxide semiconductor (CMOS) amplifiers with low susceptibility to electromagnetic interference (EMI). They represent the state-of-the-art in low EMI susceptibility design. An exhaustive scenario for EMI pollution has been considered: the injected interference can indeed directly reach the amplifier pins or can be coupled from the printed circuit board (PCB) ground. This is also a key point for evaluating the susceptibility from EMI coupled to the output pin. All of the amplifiers are re-designed in a United Microelectronics Corporation (UMC) 180 nm CMOS process in order to have a fair comparison. The topologies investigated and compared are basically derived from the Miller and the folded cascode ones, which are well-known and widely used by CMOS analog designers.
Highlights
Electromagnetic interference (EMI) can be injected on an arbitrary pin of an integrated circuit (IC).The interfering signal can propagate through the various active devices composing the IC
It has been stated that the scenario for EMI pollution can be simplified in two cases: the classic one in which the interference is directly injected into the pins of the inputs and of the power supply; and the newest, in which the EMIs are coupled from the printed circuit board (PCB)
PCB designs, the ground plane is commonly shared with other analog, digital, or mixed-signal circuits and ICs, which can be a source of high-frequency signals and, of interference
Summary
Electromagnetic interference (EMI) can be injected on an arbitrary pin of an integrated circuit (IC). It has been stated that the scenario for EMI pollution can be simplified in two cases: the classic one in which the interference is directly injected into the pins of the inputs and of the power supply; and the newest, in which the EMIs are coupled from the printed circuit board (PCB). PCB designs, the ground plane is commonly shared with other analog, digital, or mixed-signal circuits and ICs, which can be a source of high-frequency signals and, of interference. The aim of this paper is a fair comparison between the state-of-the-art complementary metal oxide semiconductor (CMOS) amplifiers in the low EMI susceptibility design, considering the full EMI scenario with several points of EMI injection.
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