A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines

Abstract

In this work we propose a method to obtain the MOSFET transistor threshold voltage, which is known to be an essential magnitude from the modeling viewpoint. Generally, there are a large number N of experimental data, and the use of smoothing splines leads to resolution of linear systems of size N+d, where d depends on the degree of the splines used. The computational effort could be reduced by decomposing the original problem into subproblems and using an appropriate method to combine the corresponding solutions. We adopt this idea, considering for simplicity the decomposition into two subsets and using a boolean sum based method for combining the intermediate spline approximants.