Abstract
An analytical subthreshold swing (SS) model for Cylindrical Gate-All-Around Junctionless Field Effect Transistor (CGAA JLFET) has been proposed in this work. Basically, 2D Poisson equation has been solved along the channel while assuming a parabolic potential distribution across the radial direction of the silicon channel, which in turn leads to some explicit relationships of the body center potential, subthreshold current and swing for CGAA JLFET. Performance analysis of subthreshold behaviors i.e. subthreshold current and swing for CGAA JLFET has been made by using different design parameters such as, gate electrode material, gate oxide thickness, silicon channel diameter and doping concentration of the channel.
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