Abstract
Silicon-based planar neuroprobes are composed of silicon substrate, conducting layer, and insulation layers of SiO2 or SiN membrane. The insulation layer is very important because it affects many key parameters of neuprobes, like impedance, SNR (signal noise ratio), reliability, etc. Monolayer membrane of SiO2 or SiN are not good choices for insulation layer, since defects and residual stress in these layers can induce bad passivation. In this paper a composite insulation structure is studied, with thermal SiO2 as the lower insulation layer and with multilayer membrane composed of PECVD SiO2 and SiN as the upper insulation layer. This structure not only solves the problem of residual stress but also ensures a good probe passivation. So it’s a good choice for insulation layer of neuroprobes.
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