Abstract
The structure of CdTe and CdTe: Cl crystals grown by the modified physical vapor transport method has been investigated using selective chemical etching, electron diffraction, and X-ray diffractometry. It has been established that the structural perfection is improved in the growth direction and from the periphery of the radial cross section toward the center of the crystal. It has been shown that the thermomechanical stresses generated by the adhesion of the crystals to the walls of the growth ampoule are the main source of the formation of dislocations and the factor responsible for their nonuniform distribution over the volume of ingots.
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