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Abstract
—A complex of equipment for diagnosing the parameters of laser radiation of semiconductor targets, which are excited by high-frequency-modulated electron-beam pulses, is described. The ability to control the shape and duration of laser radiation in the picosecond range via high-frequency modulation of an accelerating-voltage pulse was demonstrated experimentally. A train of laser-radiation pulses with a maximum intensity of up to 2 × 107 W/cm2 was obtained on a cadmium sulfide target (λ = 525 nm).
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