Abstract
Wide bandgap (WBG) semiconductors owing to their low loss and high switching capability, are gradually adopted in high power-density high efficiency applications, and impose new challenges from control to hardware design. In this paper, a Gallium Nitride (GaN) HEMT plus SiC diode based Vienna type rectifier is proposed to serve as the power factor correction stage for a high-density battery charger system. To meet low current harmonic requirement, PWM voltage distortion during turn-off transition, found as the main harmonics contributor, is studied. The distortion mechanism led by different parasitic capacitances of WBG devices is presented. A mitigation scheme is thereafter proposed considering their nonlinear voltage-dependent characteristics and eventually deduced from a pulse-based turn-off compensation to a generic modulation correction. Simulation and experimental results through a 450 kHz enhancement-mode GaN based Vienna type rectifier finally demonstrate the high performance of the proposed approach, showing a THD reduction up to 7% with a relatively low-speed control.
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