Abstract
The optical gaps of ultrathin amorphous and crystalline silicon films consisting of isolated clusters have been measured at 250°C as continuous functions of film thickness by real time spectroscopic ellipsometry. For c-Si cluster films ∼ 1.2 nm thick, a well-defined optical gap and absorption onset is identified near 3 eV that blue-shifts and steepens with decreasing thickness. A broader absorption onset leading to a much lower gap for a-Si:H cluster films of similar thickness is attributed to an electron mean free path that is less than the cluster size.
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