Abstract
In this paper images of tin-doped indium oxide thin films obtained in a scanning tunnelling microscope (STM) are compared with those obtained from conventional transmission electron microscopy (CTEM) and scanning transmission electron microscopy (STEM). Corrugations with amplitude twice as big as compared to the thickness of the sample are observed at the grain boundaries. This is interpreted to have arisen from higher density of free carriers at the grain boundaries due to segregation of dopant over these boundaries. On an average, the grains appear twice as big in STM as compared to CTEM and STEM. This is attributed to the inability of the STM to detect twinned and similar boundaries in the absence of a change in free carrier density at the boundary.
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