A Comparison of Radiation Damage in Transistors from Cobalt-60 Gamma Rays and 2.2 MeV Electrons

Abstract

The total ionizing dose response of fourteen IC types from eight manufacturers have been measured using Co-60 gamma rays and 2.2 MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source may not be a suitable simulation source for some systems, because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.