Abstract
Time- and spatially resolved optical emission spectroscopy (OES) was performed to characterize the plasma produced in a pulsed laser deposition (PLD) and a hybrid magnetron sputtering-pulsed laser deposition (MS-PLD) systems suitable for SiC thin films preparation. In the PLD system, a SiC target was ablated by a KrF laser in vacuum or argon ambient. In the MS-PLD system, a graphite target was ablated by the laser and Si target was sputtered by DC magnetron in argon ambient. The evolution of the spectra in PLD system with argon pressures 1–10 Pa and the distance from the laser target was studied. Spectra of the plasma in the PLD system revealed presence of highly excited and energetic atomic/ionic species (Ar, C, C+, Si and Si+). The shape of Si emission temporal profiles taken at the target markedly differs from those observed at further distances. In the spectra taken in the MS-PLD system, presence of excited Si atoms in the vicinity of the substrate was found and emission of C2 molecule appeared.
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