Abstract
A comprehensive comparison of npn and pnp profile design tradeoffs for SiGe HBTs is conducted using calibrated simulations. The parasitic energy band barrier induced by the SiGe/Si transition in the collector–base space charge region produces very different design constraints for pnp and npn transistors, and they must be optimized separately. A single SiGe profile is found to give acceptable performance for both npn and pnp devices, while still satisfying film stability constraints.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
