Abstract

The low-frequency noise generators in silicon homojunction and III-V heterojunction bipolar transistors are examined and compared in terms of an equivalent input noise current generator in the common-emitter configuration. The 1/f noise component of this generator has been found to depend on the base current as I/sub Bsup /spl gamma where /spl gammaspl sim/1.8 for the Si BJT's and InP/InGaAs HBT's with high current gains (/spl betaspl sim/50), and /spl gammaspl sim/1.1 for the AlGaAs/GaAs HBT's with low current gains (4 >

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