Abstract
This paper aims to present comparatively the results concerning the kinetic parameters of various silicon nitride film deposition processes. The reactions of silicon chloride, dichlorosilane or silane with ammonia were used. The effect of the following experimental parameters on the deposition rate was investigated: total gas flow rate, reactant gas concentrations, temperature of the substrate.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
