Abstract
The MeV ion and laser microbeams are the two most commonly used tools for examining the spatial and temporal dependence of charge collection processes that lead to single event phenomena in semiconductor devices. In this paper, we perform a detailed comparison of the fundamental differences that exist between the two methods for examining single event transients in InGaAs photodetectors. In particular, we compare results collected by transient laser and ion beam induced current for several ion species.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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