Abstract
The third-generation (200 GHz) silicon–germanium heterojunction bipolar transistors were irradiated with 100 MeV oxygen [O7+] ions in the dose range from 1 to 100 Mrad. The different electrical characteristics like forward-mode and inverse-mode Gummel characteristics, the normalized base current, excess base current, the current gain, damage constant, neutral base recombination, avalanche multiplication and the output characteristics were measured before and after irradiation. The ion irradiation results were compared with 60Co gamma irradiation results to understand the linear energy transfer effects on the electrical characteristics on silicon–germanium heterojunction bipolar transistors. The stopping range of ions in matter simulation study was conducted to understand the energy loss of 100 MeV O7+ ions in silicon–germanium heterojunction bipolar transistor structure.
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