Abstract
The Monte-Carlo simulation method is used to simulate the growth of the fcc (111) crystal surface, on which emerged the outcrop of a stacking fault bounded by two partial dislocations and a dipole of screw dislocations, respectively. The comparison is made between these two different growth mechanisms. It is found that the growth rate for the stacking fault mechanism is less than that for the screw dislocation mechanism at low supersaturations, but at high supersaturations, this situation is reversed.
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