Abstract
There are two major problems with the IBIC (ion beam induced charge) technique which hampers its wider use for the analysis of semiconductor materials. The small measured charge pulses give a low signal to noise ratio, and ion induced damage limits the maximum ion dose which can be used to form an IBIC image. This paper investigates the different charge pulse heights obtained using MeV protons and α particles, and the rate at which the ion induced damage decreases the measured charge pulse height.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
