A comparison between ion irradiation assisted- and electron irradiation assisted-oxygen plasma treatment on modification of nanostructured carbon films

Abstract

Oxygen plasma treatment has been used for surface modification of carbon materials. However, the working mechanism is not well clarified. Here, the ion irradiation assisted- and electron irradiation assisted-oxygen plasma etching were proposed and realized in an electron cyclotron resonance plasma processing system. The effects of the ion assisted- and electron assisted-argon plasma and oxygen plasma etching on the surface morphology and nanostructure of graphene nanocrystallites embedded carbon film were compared. In the ion assisted plasma etching, compared with argon plasma, the oxygen introduction made the sp2/sp3 and ID/IG of the film upper layer further decrease. While in the electron assisted plasma etching, after O2 introduction, the sp2/sp3 and ID/IG in the film upper layer increased. Then the oxygen plasma treatment mechanism was proposed. In the ion assisted oxygen plasma treatment, the attracted oxygen positive ions took major effect, which would reduce the threshold energy for atom displacement and then implant more carbon or oxygen atoms into the film subsurface to make the film denser. In the electron assisted oxygen plasma treatment, the neutral oxygen took major effect, which would preferentially react with the more unstable amorphous carbon and then make the film equipped with more sp2 bonds.