Abstract
Polycrystalline silicon (Wacker-SILSO) solar cells have been made by phosphorous implantation in combination with pulsed excimer laser annealing or thermal annealing. It was found that laser annealing yields cells with a short-circuit current which is 3% – 4% higher than that obtained by thermal annealing, whereas the open-circuit voltage is the same for both cases. It was concluded from curve fitting that the current-voltage characteristics of all cells could be described well using a double-exponential model.
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