A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC

Abstract

A Monte Carlo (MC) study of the hole transport in 4H-SiC is presented using three different MC models. The three models represent different approximation levels regarding band structure and scattering formulation. The most advanced model is a completely k-vector dependent full band model while the simplest model uses three analytical bands with energy dependent scattering rates. The intermediate MC model uses a full band structure calculated using a simple k· p formulation. A comparison between the models in terms of coupling constants, scattering rate, temperature dependent mobility and saturation velocity is presented.