Abstract
Cobalt ferrite (CoFe2O4) nanostructures in powder form were synthesized by an ultrasound assisted method. The crystalline structure of it was determined by XRD method. The prepared powder was mixed with an aqueous polyvinylpyrrolidone (PVP) solution to utilize as an interfacial thin film. The prepared CoFe2O4-PVP solution was deposited on the n-Si wafer utilizing electrospinning method. Electrical characteristics of the Au/n-Si (MS) and Au/(CoFe2O4-PVP)/n-Si (MPS) diodes were investigated using current and admittance (Y = G + iωC) measurements. Electrical parameters like ideality factor (n), barrier height (ΦB), and series resistance (Rs) of them were extracted from I–V measurements. The Ln(IF)-(VF) plots were drawn to determine the current conduction mechanisms (CCMs). Besides, the other diode parameters including diffusion potential, concentration of donor atoms, depletion layer width, barrier height and Fermi-energy were extracted from C−2–V characteristic. As a result, the electrical parameters of these diodes were compared with each other, and the obtained results confirm that the polymer interlayer between M and S is more affective on electrical performance of the diode.
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