Abstract
A PCl 3 transport system for epitaxial InP deposition has been considered from an equilibrium point of view and compared with a similar arsenic trichloride process for GaAs deposition. Thermochemical values for all species pertinent to these two systems were compiled and employed in conjunction with an iterative Gibbs energy minimization program to compute the gas phase equilibrium concentrations and the maximum extent of deposition. The results are presented as functions of three independent variables: the source and deposition temperatures and the initial concentration of Group III trichloride. The degree of gas phase supersaturation is presented as a function of the temperature differential between the source and deposition regions.
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