Abstract
In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically investigated. Compared with that of the ZHZ device, a higher value of remnant polarization ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{r}{)}$ </tex-math></inline-formula> for the HZH device was achieved. However, the ZHZ structure exhibits a better wake-up performance and frequency stability than HZH, as well as a higher inversion speed and more endurance cycles. Accordingly, a hybrid model involving ferroelectric (FE) polarization and interfacial ion migration is proposed. This study is helpfxg1ul for understanding and optimizing the HfO2-based FE films for non-volatile memory applications.
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