Abstract
In this study, the oxidation behavior and mechanism of SiBCN monoliths were compared with SiC and SiC-BN monoliths. At 1100–1300 °C, the oxide layers of SiC and SiBCN monoliths were relatively smooth and dense, while that of SiC-BN monoliths were destroyed by many bubbles. Further oxidized at 1500 °C, some cracks and bubbles appeared on the surfaces and interfaces of SiC-BN monoliths. The oxidation of SiC phases was thermodynamically unstable than that of C and BN, but the oxidation of BN and/or C occurred preferentially after considering the kinetic factors. BN(C) phase has a positive role on SiBCN oxidation resistance. Data availabilityThe raw/processed data required to reproduce these findings cannot be shared at this time due to legal or ethical reasons.
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