A comparative study on gate leakage and performance of high-𝛋 nano-CMOS logic gates

Abstract

This paper provides a novel attempt to evaluate the gate leakage and delay characteristics of CMOS transistors and logic gates with various alternative high-κ gate dielectrics, which are replacing SiO2 in traditional nanoscale MOSFETs. Results have been obtained for both fixed as well as variable loads. The assumption that all gates drive the same load is considered in order to provide a fair comparison of the effect of the variation of design and process parameters, especially that of different high-κ dielectrics on the gate direct tunnelling current and propagation delay. On the other hand, the variable loading effect considers a set of practical loading conditions for the logic gates. An exhaustive comparison of all cases finally presents concluding evidence that the tunnelling current is independent of the loading conditions. On the other hand, there is an increase in the delay as the dielectric constant of the gate material, and consequently the load on the device, increases. Ultimately, this paper presents fast and accurate models for on-the-fly calculation of tunnelling current and delay with the aim of integrating them into design automation tools.