Abstract
The direct growth of GaSb buffer layers on Si substrates is attracting considerable interest in the integration of group III-Sb based device structures on lower-cost Si substrates. Here, we present the effect of various growth steps on the defect types and defect density that are crucial for advancing high crystal quality GaSb buffer layer on nominal/vicinal Si substrate. As a growth step, the applied thermal annealing at an intermediate step provided a decrease in the threading dislocation (TD) density down to 1.72 × 108 cm−2, indicating a more effective method compared to post-growth annealing. Additionally, the importance of period number and position of GaSb/AlSb superlattice layers inserted in GaSb epilayers is demonstrated. In the case of the GaSb epilayers grown on vicinal substrates, the APB density as low as 0.06 µm−1 and TD density of 1.98 × 108 cm−2 were obtained for the sample grown on 4° miscut Si(100) substrate.
Highlights
Misfit dislocations, threading dislocations (TDs), antiphase boundaries (APBs), micro-twins (MTs) and micro-cracks appear during the direct growth of group III–V compounds on Si
Our recent studies [18, 22] substantiated a greater efficiency of post-growth annealing compared to an increase in the growth temperature for GaSb epilayers grown on nominal Si substrates
The GaSb epilayer grown at 530 ◦C with an AlSb nucleation layers (NL) thickness of 20 ML (NB#1) and post annealed at 570 ◦C for 30 min (NB#2) was selected as the one having the optimum performance in terms of the structural properties and surface roughness
Summary
Of functional semiconductor devices in recent years [1,2,3] This will pave the way for manufacturing the costeffective and high-speed optoelectronic devices. Si is traditionally known as the raw material used in electronic devices. It has widespread applications in semiconductor industry due to its low cost and mature production technology. Direct band gap group III–V compounds, on the other hand, provide an efficient solution for optoelectronic and high-speed devices. Misfit dislocations, threading dislocations (TDs), antiphase boundaries (APBs), micro-twins (MTs) and micro-cracks appear during the direct growth of group III–V compounds on Si
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