Abstract
Among many of the concerns for the researchers in nano-electronics, Single Gate MOSFET, Silicon Nanowire MOSFET and Carbon Nanotube MOSFET were very popular three. All of them are different in their structures and performance. This paper is focused on the comparison of their characteristics in terms of Current- voltage relations, Mobility charge density and Quantum capacitance. ‘FETToy’ in ‘nanohub’ was used to simulate the predefined models in room temperature. Drain and Gate control parameters were kept same for all of them. Keywords: Carbon Nanotube MOSFET, Silicon Nanowire MOSFET, Single Gate MOSFET, Quantum capacitance, Mobility charge density
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