Abstract
Contactless resistivity mapping, scanning electron microscope (SEM) and confocal laser microscope have been used to study the relationship of the resistivity and the etching behavior of the semi-insulating 6H-SiC wafer. Evidence is presented that the morphologies of the etch pits vary significantly with the impurity concentrations. The V impurity strongly affects the etch rates of edge, screw and mixed dislocations. For the dislocation containing the Burgers vector component of <0001>, its vertical etch rate is enhanced distinctly. In contrast, the horizontal etch rate becomes larger for the dislocation containing the Burgers vector component of < >. The shape of the etch pits reflects the Fermi level of the semi-insulating wafer and the net shallow impurity concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
