Abstract
Epitaxial fluorides on semiconductors have potential applications in three-dimensional integrated circuits and other very high-speed devices. Most of the attention in this technology has been focused on attempts to grow good quality epifluoride/semiconductor and semiconductor/epifluoride/semiconductor structures and characterize their crystalline and interfacial structural quality. However, the ultimate test of the usefulness of the epitaxial fluorides will be provided by their electrical properties. We have measured the detailed electrical properties of the CaF2/Si (100), LaF3/Si (111), CeF3/Si (111), PrF3/Si (111), NdF3/Si (111), and the (CaxSr1−x)F2/GaAs (100) structures grown in this laboratory by molecular-beam epitaxy. The results are compared with each other and also with those reported by other laboratories when available.
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